Abstract
Photoelectrochemical cells (PECs) with a structure of F-doped SnO2 (FTO)/graphene oxide (GO)/hematite (α-Fe2O3) photoanode were fabricated, in which GO serves as a sacrificial underlayer. In contrast to low-temperature sintering carried out under a normal atmosphere, high-temperature sintering was carried out for the GO underlayer-based hematite photoanodes. The photocurrent density of the PECs with GO underlayers gradually increased as the spin speed of the FTO substrate increased. In particular, GO at a spin speed of 5000 rpm showed the highest photocurrent of 1.3 mA/cm2. The higher performance of the GO/α-Fe2O3 photoanodes was attributed to the improved FTO/α-Fe2O3 interface. When sintered at 800 °C for activation of the hematite (FTO/GO/α-Fe2O3) photoanodes, the GO layers before being decomposed act as localized hot zones at the FTO/α-Fe2O3 interface. These localized hot zones play a very crucial role in reducing the microstrain (increased crystallinity) which was confirmed from the synchrotron X-ray ...
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