Abstract
The Field Plate technique has a sophisticated impact on the surface electric field profile and breakdown characteristics of the lateral power device. Yet, the physical nature of the Field Plate effect remains unclear as a result of the complexity of conventional modeling approaches. In this paper, based on the effective concentration profile (ECP) concept, the field plates induced charge relocation can be equivalent to the variation of drift region doping profile making the complicated 2-D problem reduce to a simple 1-D problem. A novel l-D analytical model is proposed accordingly to qualitatively and quantitatively explore the physical insight of gate and drain field plate effect. The results obtained by the proposed model are found to be sufficiently accurate comparing with TCAD simulation results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
