Abstract
A correlation of the electrical properties of slowly deposited cadmium sulphide thin films with electronic scattering from stacking faults is presented. Electron diffraction studies indicate that the stacking-fault density depends critically on substrate temperature. ``Cross-plane'' resistivity—film temperature data indicate the stacking-fault barrier potential to be 0.035 eV for these films. Hall investigations were also performed on misoriented-crystallite films and, in this case, stacking faults have a significant effect on the ``in-plane'' mobility. An empirical model, which includes the effects of stacking faults along with those of grain-boundary and surface scattering, has been developed to demonstrate these combined scattering effects.
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