Abstract
A microgyroscope with flat bottom surfaces free from the notching effects of deep silicon reactive ion etching (RIE) is fabricated by combining the silicon on insulator (SOI) process with the sacrificial bulk micromachining (SBM) process. Roughened bottom surfaces and loose silicon fragments are common problems in the conventional deep silicon RIE process using SOI wafers. In this paper, the silicon fragments are removed and the roughened bottom surfaces are smoothed by the SBM process. An other problem in the SOI process is the stiction due to the relatively small sacrificial gap. In this paper, a large sacrificial gap of 20 μm is used to prevent the structure from sticking to the substrate. A gyroscope is fabricated by the proposed method. The measured noise equivalent resolution is 0.0044°/s, and the measured bandwidth is about 13 Hz. The angular random walk is 0.0012°/(s (Hz) 1/2).
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