Abstract
A fuzzy static RAM (SRAM) is proposed, which is applicable in fuzzy logic and many multiple-valued logic (MVL) applications. The new structure is basically an extension to the binary SRAM cell. Two cross-coupled voltage mirror circuits are used to be able to hold an arbitrary voltage value. The proposed design forms a robust and reliable structure, which is capable of operating with more than 95% accuracy in spite of imperfect fabrication of carbon nanotube FETs. Another exceptional advantage is its ultra-low-power consumption in MVL environments. It consumes 38.7 and 99% less static power compared with the SRAMs with regular ternary and quaternary components, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
