Abstract
We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.
Highlights
Nanostructured inorganic semiconductors such as zinc sulfide (ZnS),[1,2] cadmium sulfide (CdS)[3,4] and colloidal zinc sulfide (Cox, Cux, CuInSx; Zn1-xS)[5,6,7] have been extensively investigated during the last decade due to their unique characteristics and potential applications that cannot be achieved from conventional macroscopic materials
We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles
The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing RichardsonSchottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied
Summary
Nanostructured inorganic semiconductors such as zinc sulfide (ZnS),[1,2] cadmium sulfide (CdS)[3,4] and colloidal zinc sulfide (Cox, Cux, CuInSx; Zn1-xS)[5,6,7] have been extensively investigated during the last decade due to their unique characteristics and potential applications that cannot be achieved from conventional macroscopic materials. ZnS is II-VI semiconducting compound that has great significance because of its large band gap and direct recombination It has great potential for optoelectronic devices for instance solar cells, blue light diodes and antireflection coating for infrared windows.[13,14,15,16] Because of the exceptional electro and photo luminescent properties, it is a focal phosphor material for many applications like lasers, sensors and displays. It is a prospective candidate for bio imaging applications, due to nonlinear optical multi photon absorption characteristics in visible and infrared wavelength regimes.[17,18,19]. The detailed systematic analysis of transport properties has been studied to govern the prospective conduction mechanism in ZnS nanoparticles
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