Abstract
RF-MEMS, i.e., Micro-Electro-Mechanical Systems (MEMS) for Radio Frequency (RF) passive components, exhibit interesting characteristics for the upcoming 5G and Internet of Things (IoT) scenarios, in which reconfigurable broadband and frequency-agile devices, like high-order switching units, tunable filters, multi-state attenuators, and phase shifters will be necessary to enable mm-Wave services, small cells, and advanced beamforming. In particular, satellite communication systems providing high-speed Internet connectivity utilize the K and Ka bands, which offer larger bandwidth compared to lower frequencies. This paper focuses on two design concepts of multi-state phase shifter designed and manufactured in RF-MEMS technology. The networks feature 4 switchable stages (16 states) and are developed for the K and Ka bands. The proposed phase shifters are realized in a surface micromachining RF-MEMS technology and the experimentally measured parameters are compared with Finite Element Method (FEM) multi-physical electromechanical and RF simulations. The simulated phase shifts at both the operating bands fit well the measured value, despite the measured losses (S21) are larger than 5–7 dB if compared to simulations. However, such a non-ideality has a technological motivation that is explained in the paper and that will be fixed in the manufacturing of future devices.
Highlights
RF-MEMS, i.e., Micro-Electro-Mechanical Systems (MEMS) for Radio Frequency (RF) applications have been around for a long time
Analog impedance matching tuners based on RF-MEMS technology were the first in line solution available [6], which made possible solving the problem, and, on the other
K and capitalizing on and are manufactured in the surface capitalizing on True-Time Delay (TTD) technology [9,10,11,12,13,14,15] and are manufactured in the surface micromachining technology technology available available at at Fondazione
Summary
RF-MEMS, i.e., Micro-Electro-Mechanical Systems (MEMS) for Radio Frequency (RF) applications have been around for a long time. First discussed in scientific papers after the mid-1990s [1,2], MEMS-based RF passives quickly ignited huge expectations in terms of market breakthroughs, primarily because of their remarkable and unprecedented electromagnetic characteristics, like wideband operability, large reconfigurability/tunability, very-low loss, high-isolation, high Q-factor [3]. Despite the initial market expectations of RF-MEMS were disappointed, the context started to change quite radically after 2010 when smartphones started to become increasingly more popular. Analog impedance matching tuners based on RF-MEMS technology were the first in line solution available [6], which made possible solving the problem, and, on the other. Sensors 2020, 20, 2612 first in line solution available [6], which made possible solving the problem, and, on the other hand, to score first exploitation of RF-MEMS in mass-market applications. The hand, to the score thesuccessful first successful exploitation of RF-MEMS
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