Abstract
rf magnetron sputtering, an established and scalable large area deposition process, is used to deposit Nb:TiO2 and Ta:TiO2 films onto (100) SrTiO3 substrates at temperatures TS ranging from room temperature to 400°C. Optical, electrical, and structural properties similar to those reported for pulsed laser deposition grown films were obtained. In particular, the most conducting Ti0.85Nb0.15O2 films, grown at TS≈375°C, are epitaxially oriented anatase films with conductivity of 3000Scm−1, carrier concentration of 2.4×1021cm−3, Hall mobility of 7.6cm2V−1s−1, and optical transparency T>80% from 400to900nm. The conductivity is strongly correlated with the intensity of the anatase (004) x-ray diffraction peak.
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