Abstract
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.
Highlights
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation and fabrication conditions
We found that a resistive switching mode in a single Ta2O5-based Resistive random access memory (ReRAM) can reversibly change between BRS and CRS operation depending on operation condition: high current at programming leads to clear CRS behavior and it is more severe as reducing the scavenger layer thickness
The bottom electrode was formed by photo-lithography and lift-off process using radio-frequency (RF) sputtering of Ti and Pt on commercial SiO2/ Si substrate flowing 20 sccm of Ar gas
Summary
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. This allows great advantage to the CRS, reducing leakage current through the passive devices significantly, since one of the stacked ReRAM cell is always in the OFF state regardless of the actual device s tate[17] As a result, it can solve the sneak path current problem, which results in disturbance in the output current levels during read operation and causes insufficient voltage or current driving from the peripheral circuit during program mode in a large scale array without using selector device[18,19]. We found that a resistive switching mode in a single Ta2O5-based ReRAM can reversibly change between BRS and CRS operation depending on operation condition: high current at programming leads to clear CRS behavior and it is more severe as reducing the scavenger (or reservoir) layer thickness. We analyzed the switching mode change by comparing previously reported CRS mechanisms in conjunction with the measured electrical and optical data such as the Ultraviolet (UV) transmittance and Ultraviolet Photoelectron Spectroscopy
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