Abstract
A computational study, employing a Floquet-transfer-matrix approach, of the current in a model two-step barrier diode under intense ac fields in the terahertz range is reported. It is demonstrated that the field pumps a net tunnel current through the structure, which can exhibit a negative differential resistance and whose direction can be controlled by the ac-bias amplitude. These behaviors are seen to originate from the inelastic scattering of incoming electrons by absorption or emission of field quanta from a shape resonance present in the field-free structure.
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