Abstract
A new reverse conducting lateral insulated-gate bipolar transistor (LIGBT) structure with a non-local band-to-band tunnelling junction is proposed and its operating principle is demonstrated in detail for a power-switching device. By utilising the reverse bias characteristics of the tunnelling junction, the proposed LIGBT can operate successfully in the freewheeling diode mode without an external anti-parallel diode. Analysis has illustrated that the proposed LIGBT can achieve a reverse knee voltage of −1 V and a lower reverse conduction voltage drop of −1.4 V at a current density of 100 A/cm2. It also shows a good temperature effect on the forward and reverse current. Moreover, it exhibits a better soft reverse recovery performance and about two times higher soft factor than the lateral P-i-N diode.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
