Abstract
The direct current electric voltage induced by the Inverse Spin Hall Effect (ISHE) and Anomalous Hall Effect (AHE) was investigated in the TE011 and TE102 cavities. The ISHE and AHE components were distinguishable through the fitting of the voltage spectrum. The unwanted AHE was minimized by placing the DUT (Device Under Test) at the center of both the TE011 and TE102 cavities. The voltage of ISHE in the TE011 cavity was larger than that in the TE102 cavity due to the higher quality factor of the former. Despite optimized centering, AHE voltage from TE011 cavity was also higher. The reason was attributed to the E-field distribution inside the cavity. In the case of the TE011 cavity, the DUT was easily exposed to the E-field in all directions. Therefore, the parasitic AHE voltage in the TE102 cavity was less sensitive than that in the TE011 cavity to decentering problem.
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