Abstract
Chalcogenide semiconductors have emerged as promising candidates for next-generation optoelectronics, mainly benefiting from their cost-effective processability, chemical versatility, and excellent stability. However, the device performance is limited by the complex defect characteristics, necessitating a detailed understanding of the defect density, types, and distribution. This study employs optical injection deep level transient spectroscopy to characterize the trap features of antimony bismuth sulfide-based heterojunctions. Photoexcitation offers the possibility to determine the spatial distribution of traps. It reveals distinct distributions of hole and electron traps. Short-wavelength light (570 nm) detects hole traps near the hole transport layer, while long-wavelength light (830 nm) identifies electron traps near the electron transport layer. Additional intermediate-wavelength tests (670 and 755 nm) and light field distribution simulation further elucidate the trap distribution. Transient absorption and transient photocurrent also support the non-uniform trap distribution within the chalcogenide-based photodiodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
