Abstract
Abstract The resolution limit of E-beam direct writing technology for ultimately small VLSI fabrication was discussed, from the view point of resist resolution and accuracy in overlay and linewidth control. 2-layer resist system composed of newly developed Silicone-based Negative Resist (SNR) realizes nanometer structure fabrication with high aspect ratio and large dosage margin by negative type E-beam exposure. An overlay accuracy less than 20 nm is achieved by new mark detection system, and the simulation studies indicate the linewidth control less than 20 nm by using multi-layer resist system. These results suggest the lithographic possibility of VLSI with a ground rule of 0.1 μm.
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