Abstract
In order to separate diffusion induced changes in the electrical resistivity of quench-condensed amorphous AgCu alloy films from such arising from other causes several trial experiments have been performed. Such films consisting of alternating Ag60Cu40/Ag40Cu60 layers showed a specific resistance rise which revealed the following peculiarities: 1. The duration of this increase is inversly proportional to the square of the individual Ag60Cu40/Ag40Cu60 couple thickness, 2. The increase is suppressed if rapid heating up to the crystallization temperature is performed and 3. It is not appearing in homogeneous layers. These results give clear evidence that the observed effect is arising from diffusional intermixing only. Diffusion coefficients averaged over the annealing period are estimated as D = 8.7 x 10-15 cm2s-1 x exp 0.89 eV/kT.
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