Abstract
Resistivity measurements on (LCMO/GSMO) multilayers with different thicknesses of the LCMO layers are reported. The resistivity maximum temperature indicates that the metal-insulator transition decreases with reducing LCMO layer thickness. Data above show activated conduction behaviour with , the temperature dependence of the conductivity for small-polaron hopping. The activation energy increases with reducing LCMO layer thickness in the multilayers. The explanation of the properties of the LCMO/GSMO multilayers is twofold. For doped manganese oxides, these changes can be understood by (i) considering the effect of strain on the LCMO layers in the LCMO/GSMO multilayers and (ii) assuming that the ferromagnetic transition Curie temperature and depend on the Mn-O-Mn bond angle.
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