Abstract
The reliable resistive switching properties of Au/ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> / Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> ), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 °C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
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