Abstract
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiOx/Pt thin layer system. The ion transport model is consistently coupled with solvers for the electric field and thermal diffusion. We show that the model is able to describe not only the formation of conducting filaments but also its dissolution. Furthermore, we calculate realistic current-voltage characteristics and resistive switching kinetics. Finally, we discuss in detail the influence of both the electric field and the local heat on the switching processes of the device.
Highlights
Memristive devices are devices which change their resistance by applying a voltage and maintain this value when removing it
Electrochemical metallization (ECM) cells are in principle such memristive devices
The calculated IV-characteristic is comparable to typical IV-characteristics of ECM-cells
Summary
Memristive devices are devices which change their resistance by applying a voltage and maintain this value when removing it. Due to their unique key features, including an excellent miniaturization potential (< 10 nm), high operation speed, low energy consumption (< pJ) and high endurance (> 1012 switching cycles), memristive devices have attracted a lot of attention as potential future non volatile memories and as artificial synapses within neural networks.[1,2] Electrochemical metallization (ECM) cells are in principle such memristive devices They consist of a low conductive layer, which is an ionic/electronic mixed conductor, sandwiched between a chemically active and an inert metal electrode.[3] When a positive voltage is applied to the active electrode, metal atoms can oxidize and drift and/or diffuse through the low conductive layer towards the inert electrode. When the polarity of the applied voltage changes, the filament dissolves and the device is reset back into the high resistive state (HRS) again
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