Abstract
Resistive switching in a Cu/Ta2O5/Pt structure that consisted of a few nanometer-thick Ta2O5 film was demonstrated. The Ta2O5 film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.
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