Abstract
Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application.
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