Resistive Switching Behavior of Cr-Doped SrZrO3 Perovskite Thin Films by Oxygen Pressure Change

Abstract

A non-volatile resistive random access memory (RRAM) device with a Cr-doped <TEX>$SrZrO_3/SrRuO_3$</TEX> bottom electrode heterostructure was fabricated on <TEX>$SrTiO_3$</TEX> substrates using pulsed laser deposition. During the deposition process, the substrate temperature was <TEX>$650^{\circ}C$</TEX> and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped <TEX>$SrZrO_3$</TEX> film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped <TEX>$SrZrO_3$</TEX> film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped <TEX>$SrZrO_3$</TEX>. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped <TEX>$SrZrO_3$</TEX> perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of <TEX>$100-200\;{\Omega}$</TEX> and a typical OFF state resistance of <TEX>$1-2\;k{\Omega}$</TEX>, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.