Abstract
Resistance fluctuations in thin crystalline TiO2films were investigated for gas sensing applications. The measurements were carried out as the films were irradiated by ultraviolet (UV) light with a wavelength of 370 nm in the presence of H2S. The films were prepared by reactive DC magnetron sputtering. They had a crystalline phase of anatase and a mean grain size of 17.8 nm, as found by X-ray diffraction. A prominent change in resistance noise level was discovered as the irradiated film was exposed to a gas containing 1.5 ppm of H2S, while no change was observed in the absence of UV. This effect is possibly due to decomposition of the adsorbed gas, via photocatalysis induced by TiO2, or to a decrease of the potential barrier between the charged grains.
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