Abstract
This work proposes a methodology to characterize the extent of photoresists’ CD shrink from various SEM landing energy and imaging conditions, using both AFM metrology and post-etch pattern transfer as methods to evaluate the true physical CD. The resist shrink for both 1D and 2D features with varying resist volumes can be quantified through the various metrology techniques and post-etch dimensional data. Once characterized, material response during SEM exposure can be accounted for in any CDSEM data comparison or OPC model.
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