Abstract
ABSTRACTWe have investigated the influence of process parameters in electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD) of silicon nitride, on the intrinsic stress of thin SiN films and on their composition, in order to obtain SiNx films suitable to micromechanical applications. The silane to nitrogen gas flow ratio, along with addition of helium to gas mixture, was found to be a critical parameter for the tuning of the intrinsic stress in ECR-PECVD SiNx films, from compressive to tensile stress, with a maximum related to the largest Si-N bond density in the film.
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