Abstract
This article introduces a new approach, founded on room temperature spectrally resolved scanning photoluminescence (SR-SPL) for non-destructive and quantitative mapping of the residual strain in compound semiconductor materials. Residual strains in a two inch diameter (001) wafer, sliced from semi-insulating GaAs ingot grown by the liquid encapsulated Czochralski (LEC), were characterized by measuring the strain induced modification of the photoluminescence (PL) spectra. The hydrostatic component ε H of the residual strain which is the sum of the tensile strains along the x, y and z crystallographic axes is quantitatively evaluated. Its two-dimensional distribution map exhibits a fourfold symmetry and has larger values along the 〈110〉 direction than along the 〈010〉 direction. The results are compared to the etch pits density (EPD) and the PL intensity distributions. It is found that the residual strain map is anti-correlated with the PL intensity and the EPD maps. A model for the observed feature is also discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
