Research Progress on Metal-Oxide Semiconductor Field Effect Transistors

Abstract

Metal-Oxide Semiconductor Field Effect Transistors (MOSFETs) have been constantly pursued in recent years as one of the indispensable components in modern electronic equipment, with better MOSFETs and a wider range of MOSFET applications. This study presents the classification and characteristics of MOSFETs briefly, investigates their applications in various aspects, and assesses the potential future development patterns of MOSFETs. This thesis research shows that different MOS tubes have different characteristics. MOSFETs mainly use enhanced N- and P-channel Metal-Oxide Semiconductor (NMOS and PMOS), complementary Metal-Oxide Semiconductor (CMOS), and neuronal Metal-Oxide Semiconductor (MOS). NMOS has the characteristics of less switching loss, a low threshold voltage, and is good for improving integration, but the temperature rises, etc. PMOS has the characteristics of being suitable for high-end drives and easy to drive and control, but the working speed is low and the switching loss is high. CMOS has the characteristics of good temperature stability, radiation resistance, and process complexity. Neuronal MOS can change the threshold voltage of the first input gate, and the floating gate charge can be preserved for a long time, so it is suitable for neural network applications. MOSFET can also be applied to switching and sensor applications. MOSFET applications generally belong to the fields of digital and analog circuits, communications, computers, etc. However, the application of MOS tubes in some fields still has defects. It is concluded that MOS tubes can be better used in other fields in the future, such as environmental monitoring and protection, chemical process control, etc. The future direction of MOS tubes includes higher performance, higher integration, fewer limitations, and so on. This thesis provides the direction for improvement of MOSFET research, which provides the basis and reference for subsequent research.