Abstract
The capacitively coupled radio frequency double-pipe plasma discharge jet is used for the etching process. An argon carrier gas is fed through the atmospheric-pressure plasma source; octafluorocyclobutane (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> ) etch gas is injected into the plasma. Etchings were carried out on a crystalline silicon substrate. The etching characteristics are discussed and the etch rate tendency shows the reliance of C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> gas flow rate and oxygen addition. The optimum etching rate of 7.2 μm/min was obtained at a plasma power level of 100 W and C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> gas flow rate was 250 sccm. From surface profile detection, it displays the etch profile under this atmospheric-pressure plasma jet treatment. This plasma technique could offer a breakthrough for chamber-free dry etching processing.
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