Abstract
Extreme Ultraviolet (EUV) lithography is pivotal in semiconductor manufacturing and attosecond metrology. This paper delves into the current research status and future development trends of EUV, aiming to offer a comprehensive understanding and predictions for this technologys evolution. Considering the challenges in applying EUV in chip manufacture, we will discuss advanced methods such as metalenses, phase-shifting masks, EUV transient grating spectroscopy, and negative tone development (NTD) processes to address issues in photolithography. Additionally, this article employs a methodical literature review and analysis. Presently, EUV lithography machines with a numerical aperture (NA) of 0.33 have achieved mass production of 5nm logic chips. Nevertheless, generating a more stable EUV light source and enhancing the focusing ability and power of the light source remain critical challenges requiring resolution.
Published Version
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