Abstract
Metal oxide semiconductor field effect transistor (MOSFET) in high-, mid- and low-gate stresses of hot carrier degradation effect and its 1/fγ noise feature are studied. Based on the formation theories of interface traps and oxide traps in Si-SiO2 and the MOSFET 1/fγ noise mechanism, the process of exchange carrier between the defect in gate oxide and the free-carrier in the channel is simulated by the duo-phonon emission model. A unified physical model for hot carrier effect, material defect, electrical parameter and noise was built. Also, a method characterizing the MOSFET anti-hot carrier abilities with noise parameter Sfγ is presented. The model is testified by the experiment, which is designed based on the relation between hot carrier and noise. Experimental results well confirm the developed model.
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