Abstract
This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion’s strike position is the middle of junction spacing because of the punchthrough of the electric field at anode contact. Then, the SEB hardening mechanism of LCLC is studied in this paper that the double-sided peak electric field can be effectively improved which results in a significantly decrease of maximal temperature. For the incident particle with different linear energy transfer values, we find that the SEB threshold voltage can be substantially enhanced when the carrier lifetime ( $\tau $ ) is under a certain value. In addition, the basic characteristics with LCLC are discussed that the forward and reversed characteristics are hardly affected.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
