Abstract
Planar 64x64 In<sub>0.83</sub>Ga<sub>0.17</sub>As focal plane arrays (FPA) were fabricated in this paper. The properties of In<sub>0.83</sub>Ga<sub>0.17</sub>As photodetectors such as I-V, responsivity, detectivity were characterized. Theoretical analysis and measurement of the dark current behavior of the detectors at 200-300K were presented. The typical bad pixels caused by excessive dark current were analyzed, the result shows that they are mainly caused by more ohmic current and trap-assisted tunneling current component. Dark current density is 0.986μA/cm<sup>2</sup> at an operating temperature of 200K and a bias voltage of -10 mV. The relative spectral response is in the range of 1.38 μm to 2.6 μm at 280K. The peak spectral response wavelength and quantum efficiency are 2.2 μm and 71.2% at 280K respectively. The achieved peak detectivity can reach 4.05x10<sup>11</sup>cmHz<sup>1/2</sup>W<sup>-1</sup> by thermoelectric cooling at 200K.
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