Abstract
Scanning moiré fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi2 source and drain. Nanometer-scale SMFs were formed with a scanning grating size of ds at integer multiples of the Si crystal lattice spacing dl (ds ∼ ndl, n = 2, 3, 4, 5). The moiré fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%.
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