Abstract
The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.
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