Abstract
ABSTRACTIn the next generation of semiconductor devices, minimum dimensions will be smaller, aspect ratios (height to width) of devices features will be larger, and BPSG dielectrics will be challenged to deal with these changes. A new process, which integrates deposition, flow, and anneal of BPSG films, and allows void-free filling of high-aspect-ratio trenches with excellent surface planarization, is presented in this paper. Scanning electron micrographs are used to show the extent of film coverage and planarization. Additional characterization includes ion chromatography, ellipsometry, stress measurements, and breakdown field measurements.
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