Abstract
In this paper, the p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide for plasma display panel (PDP) data driver ICs is developed. The following reliability issues have been discussed in detail: (1) hot-carrier degradation, (2) the contradiction between the parasitic bipolar junction transistor (BJT) punch-through phenomenon and the impurity segregation effect, (3) surface damage caused by the long-time diffusion process under high-temperature conditions, (4) creep behavior of the breakdown voltage and (5) the Kirk effect due to the high working current density. The improved methods for solving these reliability problems by optimizing the process and device architecture are also presented. The methods have also been verified by the technology computer-aided design (TCAD) simulations and experimental results.
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