Abstract
SiC power device can operate in temperature higher than 200°C, where conventional Si power device cannot operate normally. The heat-resistant package is required to ensure the reliability in high temperature operation of SiC power device. This study evaluates the reliability of developed package for high temperature operation in power cycle test. The given power cycle condition is ΔTj=170°C with Tj=200°C for high temperature and Tj=30°C for low temperature. The device in the package with Al2O3-ceramic fails for 3387 power cycle test, but it is necessary to further analyze failure mechanism
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