Abstract
The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower V th and I gate , which is attributed to the dipole formation at the high-k/SiO₂ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (ΔV th ) at high field PBTI is significant. The results of a transconductance shift (ΔG m ) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: JSTS:Journal of Semiconductor Technology and Science
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
