Abstract
This article presents an analysis of the reliability of memories protected with Built-in Current Sensors (BICS) and a per-word parity bit when exposed to Single Event Upsets (SEUs). Reliability is characterized by Mean Time to Failure (MTTF) for which two analytic models are proposed. A simple model, similar to the one traditionally used for memories protected with scrubbing, is proposed for the low error rate case. A more complex Markov model is proposed for the high error rate case. The accuracy of the models is checked using a wide set of simulations. The results presented in this article allow fast estimation of MTTF enabling design of optimal memory configurations to meet specified MTTF goals at minimum cost. Additionally the power consumption of memories protected with BICS is compared to that of memories using scrubbing in terms of the number of read cycles needed in both configurations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: ACM Transactions on Design Automation of Electronic Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
