Abstract
The temperature dependence of porous silicon (PS) photoluminescence and the dependence of the contact potential difference (CPD) in the dark after illumination on the photon energy were investigated for as-anodized PS and for PS oxidized in air for various times after anodization and HF treatment. The effect of the temperature-induced red shift (with decreasing temperature) decreases with increasing HF treatment time and is discussed under the assumption of different lifetimes for radiative and non-radiative recombination. Various photon energy thresholds could be observed by CPD, indicating the role of charge carrier injection in the PS properties.
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