Abstract
The relationship between growth processes and strain relaxation has been investigated on Si1−xGex (0≤x≤1) films grown on (100)Si-(2×1) surfaces by gas source molecular beam epitaxy using Si2H6 and GeH4. It has been found that the critical film thicknesses for the formation of an (8×2) superstructure, {811}-faceted islands, and {311}-faceted islands in the growth process have been found to obey power laws of xn with exponents (n) of approximately −2, −3, and −3 in the range of 0.25≤x≤1.0, respectively. This result indicates that the relaxation of the film strain energy brings about a change into faceted structures and occurs at two steps of {811} and {311} faceting with the film growth. It has been also clarified that the incorporation ratio of Si and Ge atoms into the films is determined by the rate constant ratio of the dissociative adsorption of the hydride compounds, the value of which is six for the Si2H6/GeH4 system.
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