Relationship between carbon adsorption and native oxide on Si (100) surface

Abstract

The purpose of this paper is to investigate both the orientation dependence of the adsorption for the organic carbons on the Si surface in the pure water and the relationship between the carbon adsorption and the native oxide considering the concentration of the total organic carbon by using the thermal desorption spectroscopy and the X-ray photoelectron spectroscopy. The number of the organic carbons adsorbed on the (100) surface is larger than that adsorbed on the (111) one. This phenomenon agrees with the orientation dependence of the native oxide growth. The time when the C 1S integral intensity shows the saturated value is nearly equal to the time when the formation of the first layer in the native oxide is complete. From this result, it is thought that the organic carbons are incorporated into the native oxide during the formation of the first layer. From the relationship between the adsorption theory and the experimental data, it is found that the carbon adsorption on the Si surface in the water is controlled by the surface reaction between the organic carbons and the native oxide. The adsorption model of the organic carbons is discussed.