Abstract
Acids generated upon exposure play the most important role in the pattern formation of current standard resists, called chemically amplified resists. It is well known that acid yield depends on the acid generator concentration. However, the precise relationship between acid yield and acid generator concentration has not been investigated thus far. Understanding the details in acid generation is important for the development of resist materials and the process simulation. In this work, the dependence of acid yield on the acid generator concentration was studied using poly(4-hydroxystyrene) (PHS) and poly(methyl methacrylate) (PMMA) as a matrix. Both results showed a nonlinear dependence. With increase in acid generator concentration, acid yield showed a saturation tendency. The dependence differed between PHS and PMMA. This reflects the fact that protons of acids originate from the radical cation of polymers generated by ionization.
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