Regulation of Pattern Dimension as a Function of Vacuum Pressure: Alkyl Monolayer Lithography

Abstract

Photopatterning of a hexadecyl (HD) monolayer has been demonstrated using vacuum ultraviolet (VUV; lambda = 172 nm) light under controlled vacuum pressure with the objective of minimizing the pattern dimension. X-ray photoelectron spectroscopy (XPS) and lateral force microscopy (LFM) studies reveal that photodegradation of the HD monolayer not only is limited to the regions exposed to VUV but also spreads under the masked regions. The strong oxidants generated by VUV irradiation to atmospheric oxygen and water vapor diffuse toward the masked regions through the nanoscopic channels and photodissociate the monolayer under the masked area, near the photomask apertures, resulting in broadening of the photopattern. Such broadening decreases with decreased vacuum pressure inside the VUV chamber, associated with a decrease of oxidant concentration and reduction of their diffusion. Gold nanoparticles (AuNPs) were immobilized on the VUV patterned features to probe the dimension of the chemically active pattern. Field emission electron microscopy reveals the construction of 565 nm wide pattern features at a vacuum pressure of 10 Pa. This pattern widens to 1,030 nm at 10 (4) Pa using the same size apertures (500 nm) as printed on the photomask. This study provides insight for fabricating submicron patterns with high reproducibility and its exploitation for different applications, which includes the patterning of nanoparticles, biopolymers, and other nano-objects at submicron dimensions.