Abstract
We report the effects of vapor-confined face-to-face annealing (VC-FTFA), where mica is inserted between two films and annealed using FTFA method, on the optical, photoresponse, and electrical properties of Sn-doped ZnO (n-ZnO:Sn) films deposited on a p-Si substrate using the sol-gel spin-coating method. The near-band-edge photoluminescence emission intensity is increased by a factor of 445. The photocurrents of the sample 1, 2, and 3 were 1.95 × 10−4, 1.14 × 10−3, and 3.47 × 10−3 A, respectively. The turn-on voltage of the n-ZnO:Sn film/p-Si heterojunction annealed using the VC-FTFA method was measured to be ~3.6 V, which is smaller than that of the heterojunction annealed in open air (~4.2 V). Furthermore, in n-ZnO:Sn film/p-Si heterojunctions annealed in open air and using the VC-FTFA method, the currents at 4.5 V are 4.4 and 17.9 mA, respectively. Our method could provide pathway to the easy fabrication of optoelectronic devices based on an ZnO annealed using the VC-FTFA method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
