Abstract
In this paper, we use Bruggeman model to calculate refractive index of nanoporous silicon, which was fabricated by electrochemical etching. The calculated result shows that the refractive index of the nanoporous silicon decreases linearly with increasing porosity and etching current density. In addition, the refractive index of nanoporous silicon was also measured by spectroscopic ellipsometry in the visible light spectrum range. The measured refractive index and extinction coefficient were in agreement with the calculated data, after being modified by the refractive index modified model of heavily doped silicon. In particular, we estimate the refractive index at the optical wavelengths in visible and near-infrared spectrum ranges, which may be widely used in various types of optical sensors and optoelectronic devices for optical communication systems.
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