Abstract
Based on the self-alignment principle, a new reflow flip-chip bonding technology for infrared detectors is proposed. By optimizing the dimensions between the under bump metallization (UBM) and the indium bump, 10 µm tall spherical indium balls are achieved firstly. Then the technical parameters of heating temperature and surface pre-treatment are discussed. Thereafter, a new reflow flip-chip bonding technology is applied to the infrared focal plane array (IRFPA) and it results in a 6.7% of the total bad pixel percentage which is dramatically decreased compared with the thermo-compression one of 41.9%. The deduced fatigue life of the IRFPA bonded by the new reflow flip-chip bonding technology is four times longer than that of the thermo-compression one.
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