Abstract
We present measurements of fourth-harmonic generation in reflection from the interface between two centrosymmetric media [Si(001)- SiO(2)] , using femtosecond pulses well below damage threshold. Analyses of signal amplitudes, rotational anisotropy, and sensitivity to surface roughening reveal that the surface dipole fourth-harmonic contribution dominates the bulk quadrupole contribution much more strongly than for second-harmonic generation.
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