Reexamination of Nucleation and Growth Behavior of Zn during Zincating on Al: Role of Nitric Acid Etching

Abstract

Deposition of various coatings on Al surface is required for variety of functional applications such as for better corrosion resistance, improvement in conductivity, wear resistance etc. These coatings are normally applied on Al surface followed by well-known zincating process (galvanic displacement) in order to obtain subsequent adherent overlayer coatings. Adhesion of these overlayers depends on uniformity of Zn films on Al surface and researchers normally follow either single zincating or double zincating process to eliminate oxide layer interference. However, it has been established over the years that double zincating is a better technique in comparison to single zincating to produce a uniform Zn-films on Al surface. It is to mention here that Al substrate undergoes nitric acid dip followed by single zincating prior to double zincating and is a very important step. A quiet good amount of research has already been devoted to obtain various adherent coatings on Al and Al-alloys and to analyze the nucleation mechanism during single and double zincating processes. However, the underline mechanism of nitric acid etching and its role on subsequent Zn-nucleation is yet to be fully understood. In view of this, in the present study, a systematic effort has been made to elucidate the role of nitric acid etching followed by single zincating on Zn nucleation and growth mechanism during subsequent second zincating. For this, we have studied the time-dependent zinc nucleation on 99.95% pure Al during single as well as double zincating. These Zn-nucleation and growth behavior on Al surface was monitored using AFM, FESEM and FIB-cut cross section image investigations in detail. Difference in nucleation and growth pattern of Zn on Al during two zincating processes was analyzed. Apart from these, the porous surface obtained after nitric acid dissolution was investigated in depth under AFM and FESEM along with EDS. Non-gravimetric method such as Rutherford Backscattering Spectrometry (RBS) was used to determine the deposition rate of Zn during competitive galvanic deposition of Zn and alkaline dissolution of Al while zincating. The Zn grain size obtained from AFM image was verified by GIXRD analysis. Open circuit potential (OCP) was monitored during single as well as double galvanic displacement processes to understand Zn nucleation behavior and correlated with the morphological data. The observed results will be discussed in terms of electrochemical processes involved, change in chemical nature of the Al surface and porous layer formation due to nitric acid etching and thermodynamic supersaturation on Zn nucleation. Figure 1