Abstract

In order to further improve the device utilization of a modular inverter system after the failure of a single inverter unit, a silicon (Si)/silicon-carbide (SiC) hybrid switch with high redundancy can be taken to achieve this goal. However, when the failure of the Si/SiC hybrid switches in the inverter unit occurs, the performance of this modular inverter adopting the fixed switching strategy (Fixed switching pattern and switching frequency) may be reduced. In this paper, a redundancy management strategy is proposed to prevent the performance of the Si/SiC hybrid switch-based modular inverter from reducing after the failure of the Si/SiC hybrid switches occurs. Taking the modular inverter system composed of two inverter units as an example, the experiment results demonstrate that compared to the healthy operating conditions, the increase of the voltage’s THD is smaller than 1.4%, and the increase of the total loss is smaller than 0.89%.

Highlights

  • A modular inverter system is composed of multiple inverter units in parallel, which has high reliability (Zou et al, 2018)

  • Even if the SiC MOSFET or Si insulated-gate bipolar transistor (IGBT) has an open-circuit fault, the hybrid device can still ensure the stable operation of the inverter unit, which greatly avoids the short-term idle behavior of the faulty inverter unit after the device fails (Li et al, 2020; Peng et al, 2020)

  • 4.1.1 Open-Circuit Fault of SiC MOSFET Occurs (Load Current is Smaller than I1max) In this case, the voltage THD and switching loss of “Inverter 1” increase

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Summary

Introduction

A modular inverter system is composed of multiple inverter units in parallel, which has high reliability (Zou et al, 2018). A silicon (Si)/silicon-carbide (SiC) hybrid switch is considered to be the core of high-power density, high efficiency, high reliability, and low-cost inverter applications. It is composed of two switches in parallel (Huang et al, 2015; Jiang et al, 2020), which brings higher redundancy to the inverters. Even if the SiC MOSFET or Si IGBT has an open-circuit fault, the hybrid device can still ensure the stable operation of the inverter unit, which greatly avoids the short-term idle behavior of the faulty inverter unit after the device fails (Li et al, 2020; Peng et al, 2020)

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