Abstract
A new quaternary material of GaInNAs has been proposed as base material for GaAs-based double-heterojunction bipolar transistors (DHBTs). The used InGaAs as base material results in the lower band gap energy of the base layer in heterojunction bipolar transistors (HBTs) followed by a smaller turn-on voltage. However, the compressive strain induced by the InGaAs grown on GaAs diminishes the influence of indium-addition induced band gap energy reduction, and thus abate turn-on voltage reduction. By incorporating suitable amounts of indium (In) and nitrogen (N) into GaAs, a smaller band gap material of GaInNAs lattice-matched to GaAs substrate can be obtained. In this study, N-p-n InGaP/Ga0:985In0:015N0:005As0:995/GaAs DHBTs have been demonstrated. A turn-on voltage reduction of 215mV compared to that of the conventional HBT with a GaAs base layer was obtained. The device has a peak current gain of 85 and shows good highfrequency characteristics of fT and fMAX, which are both higher than 40GHz [DOI: 10.1143/JJAP.43.1919]
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